Ferroelectric field effect transistors for electronics and
Beyond memories, coupling of ferroelectric polarization field with electronic or optoelectronic material in FeFETs brings numerous novel physical phenomena, including adaptive-learning capability, 15–20 negative
Field Effect Transistor | Advanced Batteries & Energy Storage
Field Effect Transistor For decades there has been research on transistors that can be deposited on surfaces and are very thin. These transistors are all so-called Field Effect Transistors (FETs) because this construction consists of thin films rather than the alternative, so-called bipolar transistors which require diffusion of "dopants" into a substrate.
Ferroelectric Field Effect Transistors–Based
Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility Even though a typical CAM cell comprises two SRAM cells,
Dirac-source field-effect transistors as
The operating power of field-effect transistors is constrained in part by the minimum change in voltage needed to change the current output. This subthreshold swing (SS) limit
The working principle, structural design and material development
This review examines the development and evolution of the ferroelectric layer in ferroelectric field-effect transistors (FeFETs) and ferroelectric random-access memory
Ferroelectric Field Effect Transistors–Based Content‐Addressable
Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility Even though a typical CAM cell comprises two SRAM cells, each of which has six to eight transistors and results in high energy consumption and poor density, FeFET-based high
Design of Superlattice Ferroelectric-Metal Field-effect Transistor
In the superlattice FE/DE/FE stack, the depolarization field (E dep) stretches out the coercive field distribution of the domain. As the E dep increases, the energy barrier needed to be overcome for polarization reversal to occur due to the increase of the switching field of the domain and switching time [12]. This effectively broadens the
Ferroelectric memory field-effect transistors using CVD
Ferroelectric field-effect transistors (FeFETs) have been considered as promising electrically switchable nonvolatile data storage elements due to their fast switching speed, programmable conductance, and high
A Large Window Nonvolatile Transistor Memory for High-Density
In this work, we have developed a large memory window (MW) ferroelectric field effect transistor (FeFET) memory for vertical NAND storage. We demonstrate that:
Spintronic devices for energy-efficient data storage and energy
The performance of logic circuits encompasses the same trends as memories plus some additional considerations (see Fig. 3) eld-effect transistors (FET) are in general faster than spintronic
Progress in Gallium Oxide Field-Effect
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow
The future of ferroelectric field-effect transistor technology
Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory,
The future of ferroelectric field-effect transistor technology
[1][2][3] As a field driven effect, ferroelectricity allows particularly energy efficient device operation. 3 Al 1−x Sc x N and related wurtzite-type solid solutions are a novel class of
Reconfigurable field effect transistors: A technology enablers
The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction mechanism can be reversibly reconfigured between n-type and p-type operation modes [1].To enable this functionality, those devices do not rely on chemical doping caused by impurities but rather on electrostatic doping, i.e. the generation of mobile carriers via an
DNA adsorption monitoring with interdigital open-gate junction field
This paper introduces a novel portable sensing platform designed to explore the intricate interaction between DNA molecules and silicon dioxide (SiO 2) coated on a field effect transistor (FET), bearing profound implications for a spectrum of life science applications, particularly DNA storage -silico molecular dynamic (MD) simulations are employed to gain
Non-volatile memory characteristics of flexible ferroelectric field
Ferroelectric materials, characterized by their spontaneous polarization that can be reversed by the application of an external electric field, have garnered significant attention across a wide range of applications such as non-volatile random access memory devices, field effect transistors, sensors, actuators, energy harvesting and storage, electro-optic devices,
Progress on a Carbon Nanotube Field
As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor
Review of ferroelectric field‐effect transistors for
The emergence of ferroelectricity in doped HfO 2 and (Hf,Zr)O 2 (HZO) thin films with a typical thickness of ∼10 nm has increased interest in ferroelectric (FE) memory devices, [1-6] including conventional ferroelectric random access
Single-crystalline High-κ GdOCl dielectric for two
The top-gated GdOCl/MoS2 field-effect transistors (FETs) exhibit commendable switch characteristics, a negligible hysteresis of ~5 mV and a subthreshold swing down to 67.9 mV dec−1.
Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and
Ferroelectric (FE) memory concepts such as the FE field-effect transistor (FeFET) and the FE random access memory (FeRAM) show promise in meeting these
Review of ferroelectric field‐effect transistors for
PARKetal. 1189 theFeFETconfigurationarehighlydistinctivefromthat ofaprototypicalmetal-ferroelectric-metal(MFM)struc-ture due to the inevitable involvement of the depolar-
Giant piezotronic effect in ferroelectric field effect transistor
The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors. Ferroelectric materials, as a type of piezoelectric materials, possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials. Here, we propose a strain modulated ferroelectric field-effect transistor (St-FeFET)
Polymeric charge storage electrets for non-volatile
In this review, we present the effects of the chemical structure and composition of polymer or composite electrets on tuning the memory characteristics of the non-volatile organic field effect transistor (OFET) memory devices, including
Flexible Graphene Field-Effect Transistors and Their Application
Flexible electronics are transforming our lives by making daily activities more convenient. Central to this innovation are field-effect transistors (FETs), valued for their efficient signal processing, nanoscale fabrication, low-power consumption, fast response times, and versatility. Graphene, known for its exceptional mechanical properties, high electron mobility,
State-of-the-Art β-Ga2O3 Field-Effect
For metal-oxide-semiconductor FETs (MOSFETs), the gate-connected field-plate is a useful design to manage the electric field distribution between the gate and
An index-free sparse neural network using two-dimensional
Ferroelectric field-effect transistors based on molybdenum disulfide can be used to build an in-memory sparsity architecture in which index memory is moved next to individual synapses, creating a
Nanowell field-effect transistor for highly
More specifically, imec is researching the modification of traditional metal oxide semiconductor field-effect transistors (MOSFETs) into liquid-gated field-effect
Two-Dimensional Semiconductors for State-of-the-Art
New transistor structures have been proposed, such as gate-all-around field-effect transistors (GAAFETs) and complementary field-effect transistors (CFETs). With their vdW layered structure, 2D materials are
Nonvolatile ferroelectric field-effect transistors
Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to
Ion-Sensitive Field-Effect Transistor for
In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect
6 FAQs about [Field Effect Transistor Energy Storage]
What is a ferroelectric field-effect transistor (FeFET)?
The ferroelectric field-effect transistor (FeFET) is one of the leading contenders to succeed charge-trap-based flash memory (CTF) devices in the current vertically-integrated NAND flash storage market.
Are ferroelectric field-effect transistors a key component in Data-Centric Computing?
This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.
Can ferroelectrics be used in field effect transistors?
npj 2D Materials and Applications 8, Article number: 29 (2024) Cite this article In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for sub-2nm technology node implementation.
Why do field-effect transistors have a subthreshold swing?
The operating power of field-effect transistors is constrained in part by the minimum change in voltage needed to change the current output. This subthreshold swing (SS) limit is caused by hotter electrons from a thermal electron source leaking over the potential of the gate electrode.
Can ferroelectric field effect transistors be used in a fully depleted silicon-on-insulator (SOI) platform?
In 2017 IEEE Int. Electron Devices Meeting (IEDM) 19–7 (IEEE, 2017). This work demonstrated scaled ferroelectric field-effect transistors in the fully depleted silicon-on-insulator (SOI) platform at the 22 nm node. Trentzsch, M. et al. A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs.
Is a ferroelectric field-effect transistor a synapse for deep neural network accelerators?
This work demonstrated multi-state (5-bit) weight cell/analogue synapse based on a ferroelectric field-effect transistor for deep neural network accelerator applications with a ×4 conductance modulation and ~75 ns program pulses. Seo, M. et al.